Analysis of threshold voltage fluctuations due to short channel and random doping effects
Vol. 26 No. 1 (2013), Research Papers
Vol. 26 No. 1 (2013)

Analysis of threshold voltage fluctuations due to short channel and random doping effects

Research Papers
Published 2013-03-15
A. Jiménez
Electrical and Computer Engineering Department, Instituto de Ingeniería y Tecnología Universidad Autónoma de Ciudad Juárez
R. C. Ambrosio
Electrical and Computer Engineering Department, Instituto de Ingeniería y Tecnología Universidad Autónoma de Ciudad Juárez
J. Jr. Mireles
Electrical and Computer Engineering Department, Instituto de Ingeniería y Tecnología Universidad Autónoma de Ciudad Juárez
D. García
Electrical and Computer Engineering Department, Instituto de Ingeniería y Tecnología Universidad Autónoma de Ciudad Juárez
F. J. De la Hidalga
Electrical and Computer Engineering Department, Instituto de Ingeniería y Tecnología Universidad Autónoma de Ciudad Juárez
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Keywords

Threshold Voltage
Short Channel Effects
MOSFET
2-D Simulations

How to Cite

Jiménez, A., Ambrosio, R. C., Mireles, J. J., García, D., & De la Hidalga, F. J. (2013). Analysis of threshold voltage fluctuations due to short channel and random doping effects. Superficies Y Vacío, 26(1), 1-3. Retrieved from https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/172
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Abstract

A two-dimensional (2-D) simulation study of short channel and random dopant effects on threshold voltage lowering and fluctuations in 90 nm MOSFET’s is presented. The systematic analysis of short channel and random dopant effects was carried out in 2-D on a scale to provide quantitative predictions. Simulations based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. Both short channel and random dopant effects, on threshold voltage fluctuations are simulated and discussed in MOSFET’s. The simulation results will be the start point for the analysis of threshold voltage fluctuations through the comparison with analytical models based on dopant number fluctuations. The simulations show that the threshold voltage fluctuations are principally determined by the fluctuation in the dopant number.
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